Abstract

Development-free vapor photolithography (DFVP) is a unique all-dry pattern transfer technique, which is based on the reaction of SiO 2 with HF vapor under a polymer film in the presence of accelerators at a temperature of above 100°C. In this paper, we found that the etching reaction could be catalyzed by superacids. Based on this discovery, a novel, chemically amplified, development-free vapor photolithography technique was developed, and has benn successfully applied to power electronic device manufacture.

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