Abstract
The anodic film formed on Pb + 9 at.%Bi at 0.9 V vs. Hg/Hg 2SO 4 in 4.5 mol dm −3 H 2SO 4 at 25°C was studied using X-ray diffraction (XRD) chronoamperometry and ac impedance spectroscopy. The XRD analysis shows that the anodic film on the alloy is composed of tet-PbO, PbSO 4, Bi 2O 3, PbO·PbSO 4 and probably Bi 2(SO 4) 3. The current-time transient shows that the growth of the anodic film is controlled by a diffusion mechanism. The dielectric constant of the film determined from the capacitance-time relationship measured at 2500 Hz is 243. The Mott-Schottky plot shows that the film is an n-type semiconductor. The flat-band potential of the film is −0.836 V vs. Hg/Hg 2SO 4 and the donor density is 2.73 × 10 15 cm −3.
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