Abstract
The phase composition, anodic behaviour and semiconducting properties of the anodic film on Pb-6 at % As alloy have been investigated. The linear relationship between i and t−1/2 shows that the anodic film growth is controlled by a diffusion mechanism. The experimental results show that the anodic film contains t-PbO, PbO · PbSO4, 3PbO · PbSO4 and some arsenic compounds. The dielectric constant of the film is 2.8 × 102 obtained from the capacitance-time relationship measured at 2500 Hz. The Mott-Schottky plot shows that the film is an n-type semiconductor. The flat-band potential is −0.56 V vs Hg/Hg2SO4, and the donor density is 7.2 × 1015 cm−3 for the film obtained at 0.9 V vs Hg/Hg2SO4 for 2 h on a Pb-6 at % As electrode.
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