Abstract
In this article, the synthesis (through a mixed oxide route, calcination temperature = 850 °C, sintering temperature = 870 °C, for time= 6 h) and characterization (structure, dielectric, and electrical properties) of Gd modified bismuth titanate Bi4Ti3O12 of a chemical composition Bi3.8Gd0.2Ti3O12 of Aurivillius family in ceramic form have been reported. The development of an orthorhombic structure (with a minor secondary phase) with a space group B2ab has been confirmed by analyzing room temperature X-rays diffraction pattern/data. Studies of some electrical parameters like loss tangent, dielectric constant, electric impedance, and conductivity have provided valuable data and information on conduction mechanism, structure-properties relationship, etc., in the 25–500° C temperature range at different frequencies (1 kHz − 1MHz). The presence of grain, grain boundary is confirmed from the Nyquist plot. The Nyquist plot also confirms the existence of non-Debye relaxation in the material. The frequency and temperature significantly impact the material’s various properties (dielectric and electrical).
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