Studies of SiO2 thin films implanted with 100keV silicon ions

Abstract

100 keV energetic siliconnegative ions with fluences varying from 1 x 10 15 to 2 x 10 17 ions-cm -2 are implanted in SiO 2 thin film of thickness 300 nm grown on silicon substrate. Structural properties of as-implanted samples have been investigated using glancing angle X-ray diffraction (GAXRD) and Raman Scattering. The topographical studies have been done by Atomic Force Microscopy (AFM) measurements. X-ray diffraction spectra of non-implanted sample showed the presence of broad XRD peak of SiO 2 at 22° and silicon peak at 54 ° with d∼0.177 nm corresponding to (311) reflection. The GAXRD investigation of implanted samples showed increase in the X-ray peak intensity for glancing angle 2° as compared to 1.5 ° . Particle size decreases and found to vary with ion fluences at the angle of 2 ° as compared with 1.5°, this may be due to cluster formation varies within SiO 2 matrix with depth. Raman scattering measurements reveals that theband spectra about 1100-1200 cm -1 appears due to oxide layer covering the silicon nanoclusters formed as well as the Si-O-Si stretching vibrations within SiO 2 matrix. AFM studies reveal that as compared to non-implanted samples the roughness of implanted samples decreased after implantation.