Abstract
The initial stages of epitaxy of Si on Si(100) have been studied in the low-temperature range from 290 up to 530 K. Using SPA-LEED (spot profile analysis of low-energy electron diffraction) growth imperfections could be detected. At substrate temperatures below 500 K we found that a significant fraction of surface atoms does not grow on lattice sites as given by substrate and surface reconstruction. The increasing number of atoms on non-lattice sites is connected with a drastic loss of superstructure. Only at T > 500 K all deposited atoms take part in the surface reconstruction and are found in perfect lattice sites.
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