Studies of anisotropic magnetoresistance and magnetic property of Ni81Fe19 ultra-thin films with the lower base vacuum

Abstract

A series of Ta(5nm)/Ni81Fe19(20nm)/Ta(3nm) Ni81Fe19 magnetic thin films were prepared by magnetron sputtering method in a lower test condition, and it won a excellent test result. Effects of substrate temperature and buffer layer thickness on the structure and magnetic property of Ni81Fe19 thin films had been investigated. The results show that the Ni81Fe19 films prepared at the substrate temperatures of 400°C showed a higher AMR value and a lower saturation magnetic field. The highest AMR value is 3.5% and the lowest magnetized saturated field is 739.67A/m. The Ni81Fe19 films prepared at the substrate temperatures of 500°C showed the highest saturation magnetization value. With the increase of the buffer layer thickness AMR value improves first but then decreases. It reaches the maximum when x is 5nm.