Abstract
ITO (indium tin oxide) thin films have been prepared by the magnetron sputtering method. The effects of plasma conditions on ITO thin-film properties have been investigated by means of the Langmuir probe method. Furthermore, the effects of substrate temperature have been investigated. The following results were obtained : (1) Polycrystal ITO thin films were prepared at 40°C substrate temperature. (2) High electron temperature (Te) is necessary for ITO thin-film crystallization. (3) The magnetic field plays an important role in generating high-Te plasma.
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