Abstract
High-quality transparent conductive indium tin oxide (ITO) thin films were deposited on glass substrates using radio frequency sputtering method. The structure and electrical and optical properties of the ITO thin films were mainly investigated. The ITO thin films showed strong diffraction peak having a preferred orientation along the [111] direction as the deposition temperature at 120 to 160 °C. In the transmission spectra, the optical transmittance increased in the visible range as the deposition temperature increased from RT to 160 °C. A minimum resistivity of 3.06×10-3 Ω-cm was obtained for the ITO thin film deposition at 160 °C.
Highlights
Transparent conducting oxide (TCO) thin films, such as tin oxide (SnO2), indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), gallium zinc oxide (GZO) and indium gallium zinc oxide (IGZO), are used for a wide range of important applications, such as transparent electrodes in light-emitting diode (LED) [1], organic light-emitting devices (OLED) [2], liquid crystal display (LCD) [3] and solar cell [4] applications
The structural, optical, and electrical properties of the ITO thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) pattern, UV-visible spectroscopy, and Hall measurement
Crystalline the ITO thin films were deposited on glass substrates using R.F. magnetron sputtering technique as the deposition temperature at 120 to 160 oC
Summary
Transparent conducting oxide (TCO) thin films, such as tin oxide (SnO2), indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), gallium zinc oxide (GZO) and indium gallium zinc oxide (IGZO), are used for a wide range of important applications, such as transparent electrodes in light-emitting diode (LED) [1], organic light-emitting devices (OLED) [2], liquid crystal display (LCD) [3] and solar cell [4] applications. Among the TCO thin films, indium oxide doped with tin (ITO) is widely used due to its unique electrical and optical properties such as good conductivity (about 104 Ω-1cm-1) and high transmittance (∼85%) in the visible region due to its large bandgap of about 3.70 eV [5]. ITO thin film has been prepared by various techniques, such as pulsed laser deposition [6], radio-frequency (RF) magnetron sputtering [7], the sol–gel method [8], and electron beam evaporation [9] and spray pyrolysis [10]. RF magnetron sputtering is widely used because it is considered to be one of the best methods for preparing ITO thin film with high quality. The structural, optical, and electrical properties of the ITO thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) pattern, UV-visible spectroscopy, and Hall measurement
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