Studies of Ag films deposited using partially ionized beam deposition

Abstract

Partially ionized beam deposition, in which the starting material Ag is evaporated form a crucible with a restricted nozzle, partially ionized by electron bombardment, and the ions accelerated to the deposition substrate, has been used to deposit Ag films on both Si(111) and Si(100) substrates. Characterization of the deposited films has been carried out by x‐ray diffraction, scanning electron microscopy, α‐step roughness, Auger electron spectroscopy, and ellipsometry. As a comparison, Ag films deposited without ion acceleration and by evaporated conventionally from an open crucible were also investigated. Highly textured Ag films with strong (111) orientation on Si(111) have been obtained at high accelerating voltage Va=4 kV. The surface flatness improves and the resistance of the films to impurity diffusion from the surface increases as the accelerating voltage increases.