Studies of 6H–SiC devices

Abstract

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H–SiC were systematically studied. The main works are summarized as follows: The homoepitaxial growth on the commercially available single-crystal 6H–SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p + n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K. Using thermal evaporation, Ti/6H–SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V. n-Type 6H–SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of poly-silicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to γ rays.