Abstract
Structures and properties of Pb(Zr0.5Ti0.5)O3 thin films by metallo-organic compound decomposition (MOD) process have been investigated. PZT thin films with thickness of 0.6 μml m were deposited by repeating spin-coating precursor solutions and thermal annealing steps on sapphires and (111) Si wafers with or without an Al2O3 buffer layer and a bottom platinum electrode. The structures and morphologies of the PZT films are affected strongly by thermal treatment and substrates. PZT films have good dielectric-frequency characteristics, and their dielectric constant and loss tangent are 480 and 1.1% at 1 kHz respectively. PZT films with remnant polarization Pr of 11.4 μml C/cm2 and coercive field Ec of 80 kV/cm have been obtained
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