Abstract
Epitaxial thin films of Au/SrTiO 3 (001)/SrRuO 3 heterostructures were deposited by Pulsed Laser Ablation. The thickness of the bottom electrode, SrRuO 3 (SRO) was varied from 500 Å to 5000 Å, with the aim of studying the dependence of dielectric properties of the STO films on the buffer layer thickness. It would appear that the strains introduced during the high temperature deposition of these films have a profound influence on the dielectric behavior. These effects are observed in the form of peaks in the loss curves. The results of dielectric measurements are correlated to the strain in the films. This paper also reports the results of tunability and these were found to be very encouraging.
Published Version
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