Structure of the impurity band in heavily doped nonmagnetic semiconductors

Abstract

We study the properties of the impurity band in heavily doped nonmagnetic semiconductors using the Jacobi-Davidson algorithm and the supervised deep learning method. The disorder averaged inverse participation ratio and Thouless number calculation show us the rich structure inside the impurity band. A convolutional neural network model, which is trained to distinguish the extended/localized phase of the Anderson model with high accuracy, shows us the results in good agreement with the conventional approach. Together, we find that there are three mobility edges in the impurity band for a specific on-site impurity potential, which means the presence of the extended states while filling the impurity band.