Abstract
The results of the calculation of electronic wave functions and spectra of electrons and holes in silicon quantum dots with a shallow impurity center of the donor type are presented. The fine splitting of energy levels induced by the Coulomb interaction of charge carriers with the donor and by the spin-orbit splitting in the valence band is obtained in the framework of the envelope function approximation. It is shown that the maximum removal of degeneracy is accomplished in the case of an asymmetric location of the donor inside the quantum dot when the directions of the donor radius vector do not coincide with the principal crystallographic directions.
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