Abstract
We have investigated the “straight-line defect,” which has not been classified separately and is quite similar to the carrot defect. We found that the straight-line defect differed structurally from the carrot defect. The presence of a particle on the substrate-epi layer interface seemed to be the cause of the defect; a layer of poly-type (3C-SiC) extended from the particle to the epi-layer surface. The straight-line defect likely resulted from shape change from the 3C-SiC triangular defect. This change in shape from triangular to straight-line defects depended on the C/Si ratio. To investigate the electrical characteristics, we fabricated a Schottky barrier diode (SBD) structure on a silicon carbide (SiC) epi wafer. With application of a high voltage, destruction occurred on both the upstream and the downstream side of the step flow of straight-line defects in the reverse voltage test. This reverse direction characteristic differed from that observed with triangular defects.
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