Structure of stacking fault pyramids in silicon‐on‐insulator material

Abstract

Using transmission electron microscopy (TEM), we have analyzed stacking fault pyramids found in multiple implant silicon‐on‐insulator material. From a comparison of computer simulations with weak‐beam TEM images, and from the constraints imposed by crystallography, we have found that the Burgers vectors of the pyramidal stair‐rod dislocations are edge dislocations with the Burgers vector 1/3〈100〉. We have also determined that the stacking faults in these pyramids are intrinsic, and therefore probably formed through vacancy condensation.