Abstract
The formation of thin nanoscale films of metal silicides MeSi (Me: Li, Rb, K and Cs) is studied by electron spectroscopy techniques, scanning electron microscopy, and slow electron diffraction. As a result of the high dose (1017 cm–2) implantation of low-energy (5 keV) Li, Rb, K and Cs ions into Si(111) and Si(100) single crystals and short-term thermal annealing, LiSi, RbSi, CsSi, KSi single-crystal silicide films are created in the silicon surface region. The optimal modes of ion implantation and annealing were determined for the formation of thin single-crystal films of metal silicides. The thickness of the silicide films is shown to increase with increasing energy of implanted ions and at a fixed energy to be proportional to the square root of the ion dose.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
