Abstract
Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.
Highlights
The processes of formation of nanoscale films of metal silicides in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba+ ions and alkaline elements have been studied by electron spectroscopy and low-energy electron diffraction
Systematic studies of changes in the Si surface region occurring during the implantation of Li, K, Na, Rb, Cs, and Ba ions with different energies and radiation doses have been carried out by the methods of low-energy electron diffraction Auger electron spectroscopy, and high-resolution scanning electron microscopy
We have determined the optimal modes of ion implantation and subsequent thermal annealing for the formation of thin nanosized films of metal silicides (Table)
Summary
The processes of formation of nanoscale films of metal silicides in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba+ ions and alkaline elements have been studied by electron spectroscopy and low-energy electron diffraction. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanosized silicide films have been determined. The type of surface superstructures of thin silicide films has been established. Considerable attention has been paid to the formation of thin monocrystalline silicide films of Li, K, Na, Rb, Cs, Ba in silicon in connection with the prospect of their use in thermogenerators, thermoelectric batteries, thermal radiation receivers, various sensors, as elements of functional integrated circuits for high-speed micro- and nanoelectronic devices, as well as plasmon waveguides for optoelectronic devices
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