Abstract
Ordered and disordered InGaP(0 0 1) films were grown by metalorganic vapor-phase epitaxy and studied by low energy electron diffraction, reflectance difference spectroscopy, and X-ray photoemission spectroscopy. Both alloy surfaces were covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms were terminated with hydrogen. Ordered InGaP(0 0 1) appeared indium rich, and exhibited a reflectance difference spectrum like that of InP(0 0 1). These results support a model whereby the strain energy on the ordered InGaP surface is reduced by aligning the group III atoms in alternating [1 1 0] rows, with the indium and gallium bonding to the buckled-down and buckled-up phosphorus atoms, respectively.
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