Abstract
This paper reviews the use of MeV ion channeling techniques for the characterization of heteroepitaxial strained-layer structures. We present new results for the analysis of semiconductor surface layers and buried layers, and review previous results for strained-layer superlattices. Three inclined-direction channeling approaches are discussed: angular scans to measure the strain in the upper layers, axial and planar dechanneling as a function of depth to provide a depth-resolved monitor of the strain, and catastrophic dechanneling in planes to measure small strains in superlattices. Along the growth direction dechanneling by misfit dislocations is used to monitor strain relief.
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