Interface modification using high energy (MeV) ion beam mixing

Abstract

Experiments have been carried out to investigate the parameters which can be used to control the mixing profiles, and the width of the intermixed layer, in film-substrate systems which are irradiated by high energy ion beams. Thin films of Cu and Ti were deposited on a variety of substrates such as Si, Ni, Ti, Al, and C. The samples were irradiated by ion beams of Au, Cu, and Si with energies of 1.5–9 MeV, at room temperature, while monitoring the substrate temperature. Typical examples of the RBS spectra are presented, the extent of the contribution of binary collisions on the interfacial mixing is discussed. The experimental and simulation results suggest that the interfacial mixing is dominated by the binary collisions. The width of the mixed layer and the degree of mixing can be controlled by ion beam dose and energy.