Abstract
In this study, two empirical models for the growth of millimetre–thick GaN material with either highly ordered textured or polycrystalline structure on a ceramic substrate by Hydride Vapour Phase Epitaxy (HVPE) are considered. It is suggested that the specific type of the structure of GaN is determined at the nucleation stage and depends on the character of the wetting of the surface of the substrate by the liquid gallium melt.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
