Chapter 2 High Purity InP Grown by Hydride Vapor Phase Epitaxy

Abstract

Publisher Summary This chapter presents a study on high purity indium phosphide (InP) grown by hydride vapor phase epitaxy. The chapter presents a brief and simplified summary of the transport processes involved in vapor-phase epitaxy (VPE) and the differences and similarities between hydride and chloride VPE. In both hydride and chloride VPE, pure metals are transported by chlorine from HCl. The reactor used for the growth of high purity InP should be as simple as possible and free of sources of unwanted impurities. The reactor used in the study described in the chapter was originally designed for the growth of doped binary, ternary, and quaternary multilayered structures. Substrate surface orientation and preparation are very important for epitaxial layer quality in hydride (H)-VPE. Hall-effect measurements at room temperature and liquid nitrogen temperature have become the accepted method to determine carrier concentration and mobility of high purity samples. Hall-effect measurements were made by the Van der Pauw technique. Geometry is important for Hall measurements. The chapter discusses photothermal ionization spectroscopy, magneto-photoiuminescence measurement, and constant capacitance-deep level transient spectroscopy.