Abstract
This chapter deals with the organometallic vapor-phase epitaxy (OMVPE) that is an epitaxial technique for the development of semiconductor materials. It begins with a comparison of several epitaxial techniques––such as, liquid-phase epitaxy (LPE), chloride vapor-phase epitaxy (CIVPE), hydride vapor-phase epitaxy (HVPE), molecular-beam epitaxy (MBE), and chemical-beam epitaxy (CBE). All crystal growth processes, including OMVPE, are highly complex. The design of the OMVPE process is considered in terms of––namely, (1) choice of precursor molecules, (2) design of the reactor hardware, (3) choice of growth parameters, (4) total system pressure, (5) temperature, and (5) growth rate. As an economic phenomenon, this revolution has resulted in an increase in the cost effectiveness of electronic functions at a rate unparalleled by any other technologies. The fundamental understanding of the OMVPE process is used as the basis of OMVPE process designing. The chapter also states that the optimum process design is related to the application––that is, the material, structure, and material properties desired.
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