Abstract
The atomic configuration of an oxygen-related defect complex in a SiC crystal was determined with the analyses of the extended energy-loss fine structure (EXELFS) and energy-loss near-edge structure (ELNES) in the electron energy-loss spectroscopy (EELS) associated with a transmission electron microscope (TEM). It was found that oxygen occupies a carbon site substitutionally in the SiC lattice, forming the O–VC (carbon vacancy) complex. The structure is very similar to the so-called `A-center', which is known as an oxygen-vacancy complex in silicon. The present EXELFS/ELNES analysis can open up a wide range of possibilities for the structural analysis of point defects associated with light element impurities such as carbon, oxygen and nitrogen, complementary to XAFS techniques using synchrotron orbital radiation (SOR) sources.
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