Abstract
A vertical-cavity surface-emitting laser diode with 20 pairs of AlAs/GaAs distributed Bragg reflectors (DBRs) has been grown on a Si substrate using metalorganic chemical vapor deposition. Interfacial roughness and compositional profile of the AlAs/GaAs DBR structure were studied by cross-sectional scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Auger electron spectroscopy. Cross-sectional SEM and TEM observations reveal quasi-periodic zigzag roughness and nonuniformity in the AlAs and GaAs layers. Auger electron spectroscopy reveals compositional transitions at the AlAs/GaAs heterointerfaces. A lower reflectivity of the AlAs/GaAs DBR on the Si substrate is caused by the degraded heterointerfaces.
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