Abstract
Perfect silicon tetra- and bierystals grown by the Czochralski method are investigated. The inter-actions of thermally generated lattice dislocations with ∑ = 9 boundaries and structure peculiari-ties of these boundaries in silicon tetracrystals with growth axis [221] are studied. The parameters of the dislocations are defined, as well as the conditions of their interactions with the boundary in reflection, absorption, and passage through the boundary. The observed properties are inter-preted on the basis of geometrical models of CSL and DSCL for the diamond-type structure. [Russian Text Ignored].
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