Abstract
The influence of Ga on the structural, magnetic and half-metallic properties of Co2FeSi1−xGax (0≤x≤1) thin films grown on Si (100) substrates using ultra high vacuum magnetron sputtering has been systematically investigated. The linear increase in cubic lattice parameter from 5.63Å to 5.73Å and the Curie temperature (TC) from 854K to 941K with x varying from 0 to 1 indicate the progressive substitution of Ga for Si. The coercivity (Hc) was found to decrease from 26Oe (x=0) to 3Oe (x=1) at room temperature and is attributed to the decrease in magnetic anisotropy. The magnetic hysteresis loops measured from 300–873K revealed that the film where Ga completely replaces Si exhibit better stability in both saturation magnetization (Ms) and Hc with temperature. The increase in coercivity at higher temperatures is attributed to the film to substrate interaction. The measured Ms at 100K decreases from 5.01µB/f.u. (x=0) to 4.49µB/f.u. (x=1) and follows the trend of Slater-Pauling rule. The indirect evidence of half-metallic nature is examined from the temperature dependent electrical resistivity measurements.
Published Version
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