Abstract
Magnetic tunnel junctions(MTJ) are fabricated as a function of the input power of Al thin film. Al thin films have pseudo-crystalline structure at 30, 60, 90 W and transform into amorphous like smooth nanocrystalline state at 120 W. Junction resistance increases as the annealing temperature increases up to 250 and decrease at 300 at the pseudo-crystalline barrier. When the barrier has amorphous like nanocrystalline structure, optimum annealing temperature increases up to 300 . The barrier characteristics are strongly related with the microstructure of AlOx barrier.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
