Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress**Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002).

Abstract

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal–oxide–semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.