Abstract
In this letter, a new diode trigger silicon-controlled rectifier (DTSCR) is developed for this particular application. The DTSCR is designed based on the concept that the holding voltage can be increased by the usage of a segmented emitter topology. Experimental data show that the new DTSCR can achieve a clearly elevation on both holding voltage and trigger voltage with a failure current It2 that is higher than 22mA/um at a high temperature of 125°C.
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