Abstract
Ferrovalley materials possess spontaneous valley splitting and anomalous valley Hall effect (AVHE) characteristics, making this an ideal platform for valleytronic information devices. The efficient regulation of valley splitting and the anomalous Hall current is critical for the realization of information coding. In this work, to realize the regulation of valley properties, Janus VSe2/VSeX (X = S, Te) heterojunctions are investigated using first-principles calculations. Spontaneous valley splitting and the AVHE can be achieved in VSe2/VSeX. In addition, the asymmetrical structure, different stacking configurations of heterojunctions, and the intrinsic polarity of the Janus VSeX monolayer can regulate the band alignments, i.e. type-Ⅰ, -Ⅱ, and -Ⅲ band alignments can be realized, and they are accompanied with the switch between semiconductor and metal phases. Moreover, the structure-controlled valley states and AVHE are obtained. When altering the Janus VSeS and VSeTe, the K and K′ valleys possess contrary characteristics: opposite spin signs and valley splitting occurred. Accordingly, we design a low-power-consumption switch to achieve multistate storage without external field regulation. The results can provide an alternative avenue for spintronics and valleytronics devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.