Abstract
Transmission electron microscopy (TEM) and high resolution (15 Å) parallel electron energy loss spectroscopy (PEELS) are used to investigate the chemical and structural properties of a 70 Å amorphous nitride film deposited at 300°C by remote plasma‐enhanced chemical vapor deposition. The nitride films were found to have a concentration gradient across the width. The films were silicon rich near the substrate/film interface and approached a silicon‐to‐nitrogen concentration ratio of stoichiometrically correct near the film surface. This nonuniform structure was imaged using TEM. The concentration gradient appeared as a contrast gradient. PEELS was used in conjunction with TEM in an attempt to relate the chemical composition of the film to its image contrast in order to obtain a qualitative measure of the density. The films were determined to be less dense near the interface than near the surface. Ellipsometry measurements indicate that the films were, on the average, less dense than their thermal counterparts.
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