Abstract
Abstract In this study, correlations between composition, structural and optoelectronic properties of the p-type CuCrO 2 film are discussed. The film crystal structures can be altered from composite to single phase by adjusting the Cu, Cr and O contents. The appropriate composition is a dominant factor for the formation of pure phase CuCrO 2 , and the content discrepancy between the Cu and Cr should be equal to, or lower than, 2.6 at% in the material. A higher stoichiometric ratio of oxygen is necessary to stabilize the structure of delafossite and is responsible for p-type electrical conductivity. CuCrO 2 has a continuously bonded polygonal microstructure. Intrinsic CuCrO 2 is a transparent wide band gap semiconductor, in which the transmittance is 68% at visible wavelength of 550 nm. Higher incident photon energy can cause subband transition in CuCrO 2 . The direct band gap of the CuCrO 2 film is 3.17 eV, and with lower resistivity of 2.35 Ωcm.
Published Version
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