Abstract

Copper–graphite composites are promising functional materials exhibiting application potential in electrical equipment and heat exchangers, due to their lower expansion coefficient and high electrical and thermal conductivities. Here, copper–graphite composites with 10–90 vol. % graphite were prepared by hot isostatic pressing, and their microstructure and coefficient of thermal expansion (CTE) were experimentally examined. The CTE decreased with increasing graphite volume fraction, from 17.8 × 10−6 K−1 for HIPed pure copper to 4.9 × 10−6 K−1 for 90 vol. % graphite. In the HIPed pure copper, the presence of cuprous oxide was detected by SEM-EDS. In contrast, Cu–graphite composites contained only a very small amount of oxygen (OHN analysis). There was only one exception, the composite with 90 vol. % graphite contained around 1.8 wt. % water absorbed inside the structure. The internal stresses in the composites were released during the first heating cycle of the CTE measurement. The permanent prolongation and shape of CTE curves were strongly affected by composition. After the release of internal stresses, the CTE curves of composites did not change any further. Finally, the modified Schapery model, including anisotropy and the clustering of graphite, was used to model the dependence of CTE on graphite volume fraction. Modeling suggested that the clustering of graphite via van der Waals bonds (out of hexagonal plane) is the most critical parameter and significantly affects the microstructure and CTE of the Cu–graphite composites when more than 30 vol. % graphite is present.

Highlights

  • Materials in contact with the chip should have a coefficient of thermal expansion (CTE) close to 4 × 10−6 K−1, that of Si [4,5]

  • Cu–graphite composites with 10 and 90 vol % graphite were prepared from the mixture of copper and graphite powders by hot isostatic pressing (HIPing) to investigate the coefficient of thermal expansion over the whole range of graphite content, including the pure HIPed copper sample

  • It was observed that the internal stresses in the composites were released during the first heating of the CTE measurement

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Summary

Introduction

Electronic components in applications such as central processing units of computers, phones, broadcast radio and television receivers, and other daily used appliances in households and workplaces suffer from severe overheating. Silicon (Si) chips represent the typical electronic component that is usually produced. This chip, in commercial devices, needs to be maintained in a stress-free condition. For heat dissipation from the chip, the installation of a heat sink must be considered. The material of a heat sink should have high thermal conductivity. On the other hand, this material has to avoid any stress. Materials in contact with the chip should have a coefficient of thermal expansion (CTE) close to 4 × 10−6 K−1 , that of Si [4,5]

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