Abstract
Thin films of nichrome were deposited by d.c. sputtering of a target (80%Ni 20%Cr w.t) by Ar+ions at a working pressure of 10-1 Pa and at room temperature. The phase composition and grain size were studied by X-ray Diffraction (XRD), while the surface chemical composition was determined by Low Energy Ion Scattering (LEIS). Analysis of phase composition showed that the NiCr thin films were a solid solution of chromium in a nickel matrix with increased nickel lattice parameters. LEIS analysis showed the presence of Ni Cr and O in the first atomic layer. There is a strong suspicion that surface passivation occurred by forming Cr2O3 oxide at the surface.
Highlights
Nichrome (NiCr 80/20 wt.%) is a material with many various applications in different fields such as electronic industry or strain gauge applications
Thin films of nichrome were deposited by d.c. sputtering of a target (80%Ni – 20%Cr w.t.) by Ar+ ions at a working pressure of 10-1 Pa and at room temperature
The phase composition and grain size were studied by X-ray Diffraction (XRD), while the surface chemical composition was determined by Low Energy Ion Scattering (LEIS)
Summary
Nichrome (NiCr 80/20 wt.%) is a material with many various applications in different fields such as electronic industry (production of resistor elements) or strain gauge applications. Abstract: Thin films of nichrome were deposited by d.c. sputtering of a target (80%Ni – 20%Cr w.t.) by Ar+ ions at a working pressure of 10-1 Pa and at room temperature. The phase composition and grain size were studied by X-ray Diffraction (XRD), while the surface chemical composition was determined by Low Energy Ion Scattering (LEIS).
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