Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

Abstract

High quality transparent conductive ZnO thin films were deposited on quartz glass substrates using pulsed laser deposition (PLD). We varied the growth conditions such as the substrate temperature and oxygen pressure. X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), and atomic force microscopy (AFM) measurements were done on the samples. All films show n-type conduction, the best transparent conductive oxide (TCO) performance (Al-doped ZnO = 1.33 × 10 −4 Ω cm, Ga-doped ZnO = 8.12 × 10 −5 Ω cm) was obtained on the ZnO film prepared at pO 2 = 5 mTorr and T s = 300 °C.