Abstract

Silicon carbide nitride (SiCN) films were deposited on p-Si (100) substrates by dual ion beam reactive sputtering deposition with various assisting ion beam energies at room temperature. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, Fourier transform infrared spectroscopy, and Raman scattering measurement were used to investigate the properties of the films. Results show that an increase in assisting ion beam energy remarkably influences film composition. The effects of assisting ion beam energy on chemical structure and photoluminescence properties and their interplays in SiCN films are discussed in detail.

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