Abstract
Al/SiC interfaces were fabricated by diffusion bonding a pure Al foil between two blocks of SiC for temperatures ranging from 500 to 600°C. For samples bonded below 586°C, the interfacial strength was low and TEM speciments could not be fabricated due to separation of the Al and SiC pieces dring thinning. For samples bonded at and above 586°C, a strong bond was formed and conventional and high-resolution transmission electron microscopy revealed the formation of a thin amorphous phase at the interface. Compositional analysis showed that the interfacial phase contained Al, Si, C and O. Formation of the amorphous phase was demonstrated to occur by a solid state reaction and is discussed on the basis of thermodynamic and kinetic considerations. Lastly, some of the advantages of having an amorphous phase at a metal/ceramic interface are discussed.
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