Abstract
We have grown Ge3Mn5 clusters by codepositing germanium and manganese atoms on Ge(001) substrates using low temperature molecular beam epitaxy and further annealing the films at high temperature. Clusters are spherical and randomly distributed in the germanium film in epitaxial relationship with the diamond lattice. They exhibit a broad size distribution. By performing a careful x-ray diffraction analysis, we could find that 97% of Ge3Mn5 clusters have their c-axis perpendicular to the film plane while 3% exhibit in-plane c-axis. We could also show a slight in-plane distortion of the Ge3Mn5 lattice leading to a reduction of uniaxial magnetic anisotropy. These observations are well confirmed by complementary superconducting quantum interference device and electron paramagnetic resonance measurements.
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