Abstract
Pure HfO2 and Gd-doped HfO2 thin films have been grown on different single crystal substrates (silicon, R-Al2O3, and LaAlO3) by pulsed laser deposition. X-ray diffraction (XRD) patterns show that the pure HfO2 thin films are of single monoclinic phase. Gd-doped HfO2 films have the same XRD pattern except that their diffraction peaks have a shift toward lower angles, which indicates that Gd dissolves in HfO2. Transmission electron microscopy images show a columnar growth of the films. Very weak ferromagnetism is observed in pure and Gd-doped HfO2 films on different substrates at 300 and 5K, which is attributed to either impure target materials or signals from the substrates. The magnetic properties do not change significantly with postdeposition annealing of the HfO2 films. In addition to the films, HfO2 powders were annealed in pure hydrogen flow, and a ferromagnetic signal was not observed.
Highlights
Dilute magnetic semiconductors have attracted much attention recently because of their combined magnetic and transport properties
Thereafter, theoretical calculation suggests that this unexpected ferromagnetism may arise from the cation vacancy in the HfO2 films
We report the structure and magnetic properties of pure and Gd-doped HfO2 thin films deposited on different substrates by pulsed laser depositionPLDand the effects on the magnetic properties by annealing
Summary
Dilute magnetic semiconductors have attracted much attention recently because of their combined magnetic and transport properties. Structure and magnetic properties of pure and Gd-doped HfO2 thin films Wendong Wangaand Yuanjia Hong Department of Physics, University of New Orleans, New Orleans, Louisiana 70148
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