Abstract
We report on the structural and magnetic properties of Al1−xSixN films with 0≤x≤0.11 deposited on Si (100) substrates by radio frequency reactive sputtering. X-ray diffractometry (XRD) and energy-dispersive X-ray spectroscopy (EDS) analysis clearly showed that Si atoms were successfully incorporated into AlN, while the crystal structure of the films was maintained. The magnetization curves indicated all the Si-doped AlN films exhibited room-temperature ferromagnetism. Ferromagnetism signals of Si-doped AlN enhanced with increasing Si content and the maximum saturation magnetization (Ms) and coercive field (Hc) obtained at 300K were about 3.13×10−6emu and 110Oe, respectively. The results reveal that Si is a potential nonmagnetic dopant for preparing diluted magnetic semiconductor films. It is speculated that the defects-related effects play an important role to determine the long-range magnetic order in Si-doped AlN.
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