Abstract
AlN film doped with 1.2 at.% Titanium (Ti) was successfully prepared on a silicon (100) substrate by radio frequency reactive sputtering. X-ray diffractometry (XRD) analysis clearly showed that the (002) peak position of the AlN:Ti film slightly shifted to higher angles compared with pure AlN, while the crystal structure of sample was maintained. The rocking curve results revealed that the deposited films have a good crystalline quality. X-ray photoelectron spectroscopes (XPS) proved that Ti atoms were successfully incorporated into AlN without forming any secondary phase. Atomic force microscopy (AFM) revealed the doped film sample possess smooth surface and homogeneous grain size with a root mean square roughness (RMS) value of 1.49 nm. The magnetization versus magnetic field (M-H) curves indicated the Ti-doped AlN films exhibited room temperature ferromagnetism. The saturation magnetizations (Ms) and coercive fields (Hc) obtained at 300 K were about 9.82 × 10–6 emu and 75 Oe, respectively. The results reveal that Ti is a potential dopant for preparing diluted magnetic semiconductors film.
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