Abstract
The temperature dependence of photoluminescence (PL) in the range 8-300 K is studied for sin� gle crystalline silicon irradiated by protons at high temperatures. It is shown that the samples with ptype con� ductivity display intense PL in contrast to the samples with ntype conductivity, which do not display photo� luminescence. Studies using highresolution transmissi on electron microscopy (TEM) have shown that pho� toluminescence exists until crack formation and splitting of the irradiated layer. The rodlike defects {113} formed during irradiation transform into residual fragments of dislocation structures.
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