Abstract
In this work, the composition of (0.85-x)BaTiO3–0.15BiFeO3–xKVO3 (TFVx) was investigated. The sintered sample behaves tetragonal perovskite ABO3 structure, defects, and a trace secondary phase of Ba3(VO4). The X-ray Absorption Near Edge Spectroscopy (XANES) analysis on the Fe K-edge TFVx sample determined the oxidation state of Fe, it is a mixture of 3+ and 4+, while the Extended X-Ray Absorption Fine Structure (EXAFS) revealed a local distortion of octahedron BO6. The Arrhenius plot of the ln σ vs. 1/T showing n-type semiconductor, the conductivity behavior indicates it presents the small polaron hopping, Schottky defect, and oxygen vacancy VO••that contribute to the conductivity. The relative permittivity (εr) displays two maxima related to Curie temperature of the matrix BaTiO3 and the defective lattice producing diffuse transition that intervene permittivity. Increasing the frequency causes the peak permittivity and the dielectric loss (tanδ) shift towards higher temperatures. These findings suggest the sample delivering relaxor behavior.
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