Structure and growth of Bi(110) islands on Si(111) 3×3−B substrates

Abstract

The structure and growth of ultrathin Bi(110) islands were investigated on a Si(111)$\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}\text{\ensuremath{-}}B$ substrate by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Both even- and odd-layer-height islands nucleated on a one-monolayer-thick wetting layer. The islands preferred the even layer heights over the odd layer heights with an area ratio of 3:1. A weak, long-range corrugation was observed to overlap on the atomic arrangement at the top of the islands. The average distance between the peaks of the corrugation oscillated in accordance with the alternation of even and odd layer heights. Nucleation of single- and double-layer terraces occurred on the islands with even layer heights but not on those with odd layer heights. The unit cell of the single-layer terrace was aligned with that of the underlying even-layer-height island. The inequality in the height preference and the height-dependent oscillation of the corrugation suggested that the even- and odd-layer-height islands possessed different structures. The dominance and stability against terrace nucleation of the even-layer-height islands were consistent with the theoretically predicted stability of the paired layer-stacked black-phosphorus (BP)-like structure for ultrathin Bi(110) films. The alignment of the unit cell at the terrace on the island and STS spectra suggested a BP-like/bulklike/BP-like sandwich structure for the odd-layer-height Bi(110) islands.