Abstract
ABSTRACT Ultrathin Bi films have attracted substantial attention as promising candidates for two-dimensional topological insulators. The nucleation and growth of ultrathin Bi films on various substrates are reviewed, while the focus is on the Si(111) substrates in this article. During film growth, the Si substrate becomes covered by a one-monolayer-thick wetting layer, upon which Bi(110) islands composed of an even number of layers with the black phosphorus (BP) allotrope structure preferentially nucleate. However, a small number of Bi(110) islands containing an odd number of layers also coexist during the nucleation stage. In these islands, the top and bottom layers have the BP structure, whereas the inner layers have a bulk-like rhombohedral structure. Upon increasing the deposited amount of Bi atoms beyond a certain critical thickness, the Bi(110) islands transform into Bi(111) islands. These structural changes and the transformation occurring in the ultrathin films are driven by competition between the surface and bulk cohesive energies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
