Abstract
SrBi4Ti4O15 (SBTi) and Bi-excess and Sr-deficient SBTi (Sr-deficient SBTi, Sr0.8Bi4.13Ti4O15) thin films were deposited on Pt/Ti/SiO2/Si (100) substrates using a sol–gel method. Structure and electric properties were investigated systematically. These films were random oriented. The remnant polarization (2P r) of SBTi film was about 25.3 μC/cm2, which was larger than the reported value of SBTi thin film. The film with Sr-deficient and Bi-excess composition showed a very large remnant polarization of 36.6 μC/cm2. The capacitance–voltage (C–V) characteristics of both the films showed normal ferroelectric behavior. The Curie temperatures of the same Sr-deficient and Bi-excess component ceramics sample increased slightly in comparison with that of SBTi. More importantly, the Sr-deficient and Bi-excess SBTi thin film showed high fatigue resistance against continuous switching up to 4.4 × 1010 cycles.
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