Abstract
The optical properties of Ge2Sb2Te5 thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge2Sb2Te5 thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
